SPATIAL-RESOLUTION OF SEM-EBIC IMAGES

被引:7
作者
DONOLATO, C
机构
[1] Max-Planck-Institut für Festkörperforschung
关键词
D O I
10.1016/0038-1101(79)90129-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Experiments indicate that the spatial resolution of SEM-EBIC images of semiconductor defects is not limited by the minority carrier diffusion length L. It is shown that this property can be explained by a three-dimensional analysis of the diffusion of beam generated minority carriers in a semiconductor having L → ∞. For a small localized defect, the resolution is expected to be limited by the defect depth or the extension of the generation region, whichever is the greatest. © 1999.
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页码:797 / 799
页数:3
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