OBSERVATION OF DISLOCATIONS IN A SILICON PHOTOTRANSISTOR BY SCANNING ELECTRON-MICROSCOPY USING BARRIER ELECTRON VOLTAIC EFFECT

被引：21

作者：

HOLT, DB

OGDEN, R

机构：

[1] IMPERIAL COLL SCI & TECHNOL,DEPT MET & MAT SCI,LONDON SW7 2BP,ENGLAND

[2] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCESTER,NORTHAMPTONSHIR,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 01期

关键词：

D O I：

10.1016/0038-1101(76)90130-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：37 / &

共 18 条

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CZAJA, W ;

PATEL, JR .

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[6] INFLUENCE OF CRYSTALLOGRAPHIC DEFECTS ON DEVICE PERFORMANCE [J].

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SCHWUTTK.GH .

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[7] SCANNING ELECTRON-MICROSCOPE STUDIES OF ELECTROLUMINESCENT DIODES OF GAAS AND GAP .2. ANALYSIS OF GAAS LINE SCAN TRACES [J].

HOLT, DB ;

CHASE, BD .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01) :135-144

[8]

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[9]

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[10] SILICON POWER DEVICE MATERIAL PROBLEMS [J].

JOHN, HF .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (08) :1249-+

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