SILICON POWER DEVICE MATERIAL PROBLEMS

[1] ALLEGRETTY JE, 1961, METALLURGY ELEMENTAL, P255

[2] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160

[3] CRYSTALLOGRAPHY OF SIP AND SIAS SINGLE CRYSTALS AND OF SIP PRECIPITATES IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4683 - &

[4] GOLD IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) : 588 - 591

[5] BENSON KE, 1965, ELECTROCHEM TECHNOL, V3, P332

[6] BHOLA SR, 1963, RCA REV, V24, P511

[7] BIONDI FJ, 1958, TRANSISTOR TECH 2 ED

[8] X-RAY SURFACE TOPOGRAPHY OF DIFFUSION-GENERATED DISLOCATIONS IN SILICON (CONTRAST EXTINCTION BORON DIFFUSION E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 176 - &

[9] HIGH-TEMPERATURE X-RAY TOPOGRAPHY OF SI WAFERS STRAINED BY THIN SURFACE FILMS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 245 - &

[10] BOATMAN JC, 1967, ELECTROCHEM TECHNOL, V5, P98

[1] ALLEGRETTY JE, 1961, METALLURGY ELEMENTAL, P255

[2] UNIFORM SILICON P-N JUNCTIONS .1. BROAD AREA BREAKDOWN [J]. JOURNAL OF APPLIED PHYSICS, 1960, 31 (07) : 1153 - 1160

[3] CRYSTALLOGRAPHY OF SIP AND SIAS SINGLE CRYSTALS AND OF SIP PRECIPITATES IN SI [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) : 4683 - &

[4] GOLD IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (10) : 588 - 591

[5] BENSON KE, 1965, ELECTROCHEM TECHNOL, V3, P332

[6] BHOLA SR, 1963, RCA REV, V24, P511

[7] BIONDI FJ, 1958, TRANSISTOR TECH 2 ED

[8] X-RAY SURFACE TOPOGRAPHY OF DIFFUSION-GENERATED DISLOCATIONS IN SILICON (CONTRAST EXTINCTION BORON DIFFUSION E) [J]. APPLIED PHYSICS LETTERS, 1965, 7 (06) : 176 - &

[9] HIGH-TEMPERATURE X-RAY TOPOGRAPHY OF SI WAFERS STRAINED BY THIN SURFACE FILMS [J]. APPLIED PHYSICS LETTERS, 1966, 9 (06) : 245 - &

[10] BOATMAN JC, 1967, ELECTROCHEM TECHNOL, V5, P98