SILICON POWER DEVICE MATERIAL PROBLEMS

[41] EISNER RL, 1964, MAY P SPRING M ECS T, P121

[42] NOVEL METHOD OF SEMICONDUCTOR DEVICE MEASUREMENTS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1642 - &

[43] EVALUATION OF PASSIVATED INTEGRATED CIRCUITS USING THE SCANNING ELECTRON MICROSCOPE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) : 929 - 936

[44] PRECIPITATION EFFECTS IN DIFFUSED TRANSISTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1536 - +

[45] FAUST JW, 1966, ELECTROCHEM TECH, V4, P277

[46] FAUST JW, 1965, 4 P ANN S PHYS FAIL, P367

[47] FAUST JW, 1966, ELECTROCHEM TECH, V4, P399

[48] FAUST JW, 1964, ELECTROCHEM TECH, V2, P298

[49] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &

[50] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436

[41] EISNER RL, 1964, MAY P SPRING M ECS T, P121

[42] NOVEL METHOD OF SEMICONDUCTOR DEVICE MEASUREMENTS [J]. PROCEEDINGS OF THE IEEE, 1964, 52 (12) : 1642 - &

[43] EVALUATION OF PASSIVATED INTEGRATED CIRCUITS USING THE SCANNING ELECTRON MICROSCOPE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) : 929 - 936

[44] PRECIPITATION EFFECTS IN DIFFUSED TRANSISTOR STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1536 - +

[45] FAUST JW, 1966, ELECTROCHEM TECH, V4, P277

[46] FAUST JW, 1965, 4 P ANN S PHYS FAIL, P367

[47] FAUST JW, 1966, ELECTROCHEM TECH, V4, P399

[48] FAUST JW, 1964, ELECTROCHEM TECH, V2, P298

[49] STRUCTURE AND ORIGIN OF STACKING FAULTS IN EPITAXIAL SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) : 406 - &

[50] EFFECT OF HEAT TREATMENT UPON THE ELECTRICAL PROPERTIES OF SILICON CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) : 1427 - 1436