HIGH-TEMPERATURE X-RAY TOPOGRAPHY OF SI WAFERS STRAINED BY THIN SURFACE FILMS

被引：9

作者：

BLECH, IA

MEIERAN, ES

机构：

来源：

APPLIED PHYSICS LETTERS | 1966年 / 9卷 / 06期

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D O I：

10.1063/1.1754732

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：245 / &

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[4] X-RAY EXTINCTION CONTRAST TOPOGRAPHY OF SILICON STRAINED BY THIN SURFACE FILMS
MEIERAN, ES
BLECH, IA
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) : 3162 - &
[5] Thun R. E., 1963, PHYS THIN FILMS, V1, P187
[6] STRESSES IN ANODIC FILMS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (04) : 345 - 346