THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON

被引：21

作者：

OURMAZD, A ^{[1
]}

WILSHAW, PR ^{[1
]}

BOOKER, GR ^{[1
]}

机构：

[1] DEPT MET & SCI MAT,OXFORD,ENGLAND

来源：

JOURNAL DE PHYSIQUE | 1983年 / 44卷 / NC-4期

关键词：

D O I：

10.1051/jphyscol:1983434

中图分类号：

学科分类号：

摘要：

引用

页码：289 / 295

页数：7

共 13 条

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DONOLATO, C
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[2] DONOLATO C, 1978, OPTIK, V52, P19
[3] CONTRAST AND RESOLUTION OF SEM CHARGE-COLLECTION IMAGES OF DISLOCATIONS
DONOLATO, C
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 80 - 81
[4] AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .1. MINORITY-CARRIER GENERATION, DIFFUSION, AND COLLECTION
DONOLATO, C
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (02): : 649 - 658
[5] ON THE SENSITIVITY OF THE EBIC TECHNIQUE AS APPLIED TO DEFECT INVESTIGATIONS IN SILICON
KITTLER, M
SEIFERT, W
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02): : 573 - 583
[6] ELECTRICAL RECOMBINATION EFFICIENCY OF INDIVIDUAL EDGE DISLOCATIONS AND STACKING-FAULT DEFECTS IN N-TYPE SILICON
OURMAZD, A
BOOKER, GR
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 771 - 784
[7] OURMAZD A, 1981, CRYST RES TECHNOL, V16, P137
[8] OURMAZD A, PHIL MAG
[9] OURMAZD A, 1981, I PHYS C SER, V61, P519
[10] INTERPRETATION OF THE EBIC CONTRAST OF DISLOCATIONS IN SILICON
PASEMANN, L
BLUMTRITT, H
GLEICHMANN, R
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (01): : 197 - 209