ON THE SENSITIVITY OF THE EBIC TECHNIQUE AS APPLIED TO DEFECT INVESTIGATIONS IN SILICON

被引：51

作者：

KITTLER, M

SEIFERT, W

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 02期

关键词：

D O I：

10.1002/pssa.2210660220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

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页码：573 / 583

页数：11

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