ON THE ANALYSIS OF EBIC CONTRAST OF CRYSTAL DEFECTS

[1] COMBINED SCANNING (EBIC) AND TRANSMISSION ELECTRON-MICROSCOPIC INVESTIGATIONS OF DISLOCATIONS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 611 - 620

[2] DETECTION OF PARTIAL DISLOCATIONS IN SILICON WITH SCANNING ELECTRON BEAM TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 918 - &

[3] COMPUTER-SIMULATION OF SEM ELECTRON-BEAM INDUCED CURRENT IMAGES OF DISLOCATIONS AND STACKING-FAULTS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1624 - 1633

[4] DONOLATO C, 1978, OPTIK, V52, P19

[5] CONTRAST AND RESOLUTION OF SEM CHARGE-COLLECTION IMAGES OF DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 80 - 81

[6] SPATIAL-RESOLUTION OF SEM-EBIC IMAGES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (09) : 797 - 799

[7] DISPLAY OF INFORMATION FROM SCANNED MEASURING SYSTEMS BY CONTOUR MAPPING [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1969, 2 (01): : 93 - &

[8] INVESTIGATION OF DEFECTS AND STRIATIONS IN AS-GROWN SI CRYSTALS BY SEM USING SCHOTTKY DIODES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 313 - 315

[9] INFLUENCE OF MICRODEFECTS ON CHARGE-CARRIERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (02): : 639 - 643

[10] ON THE INTERACTION BETWEEN CRYSTAL DEFECTS AND IMPURITIES IN SILICON INVESTIGATED BY ELECTRON-MICROSCOPIC METHODS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : 173 - 180

[1] COMBINED SCANNING (EBIC) AND TRANSMISSION ELECTRON-MICROSCOPIC INVESTIGATIONS OF DISLOCATIONS IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 611 - 620

[2] DETECTION OF PARTIAL DISLOCATIONS IN SILICON WITH SCANNING ELECTRON BEAM TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (02) : 918 - &

[3] COMPUTER-SIMULATION OF SEM ELECTRON-BEAM INDUCED CURRENT IMAGES OF DISLOCATIONS AND STACKING-FAULTS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) : 1624 - 1633

[4] DONOLATO C, 1978, OPTIK, V52, P19

[5] CONTRAST AND RESOLUTION OF SEM CHARGE-COLLECTION IMAGES OF DISLOCATIONS [J]. APPLIED PHYSICS LETTERS, 1979, 34 (01) : 80 - 81

[6] SPATIAL-RESOLUTION OF SEM-EBIC IMAGES [J]. SOLID-STATE ELECTRONICS, 1979, 22 (09) : 797 - 799

[7] DISPLAY OF INFORMATION FROM SCANNED MEASURING SYSTEMS BY CONTOUR MAPPING [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1969, 2 (01): : 93 - &

[8] INVESTIGATION OF DEFECTS AND STRIATIONS IN AS-GROWN SI CRYSTALS BY SEM USING SCHOTTKY DIODES [J]. APPLIED PHYSICS LETTERS, 1975, 27 (06) : 313 - 315

[9] INFLUENCE OF MICRODEFECTS ON CHARGE-CARRIERS IN SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (02): : 639 - 643

[10] ON THE INTERACTION BETWEEN CRYSTAL DEFECTS AND IMPURITIES IN SILICON INVESTIGATED BY ELECTRON-MICROSCOPIC METHODS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01): : 173 - 180