ON THE INTERACTION BETWEEN CRYSTAL DEFECTS AND IMPURITIES IN SILICON INVESTIGATED BY ELECTRON-MICROSCOPIC METHODS

被引：25

作者：

MENNIGER, H ^{[1
]}

RAIDT, H ^{[1
]}

GLEICHMANN, R ^{[1
]}

机构：

[1] ACAD SCI GDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-401 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 01期

关键词：

D O I：

10.1002/pssa.2210580121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：173 / 180

页数：8

共 13 条

[1] BRESSE JF, 1977, SCANNING ELECTRON MI, V1, P683
[2] PRECIPITATION OF COPPER IN SILICON
DAS, G
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) : 4459 - 4467
[3] EREMENKO VG, 1974, ZH EKSP TEOR FIZ+, V67, P1148
[4] FOLL H, 1975, PHYS STATUS SOLIDI A, V31, P519, DOI 10.1002/pssa.2210310223
[5] DEGRADATION OF CARRIER LIFETIME IN SILICON-CRYSTALS AT ROOM-TEMPERATURE
GRAFF, K
PIEPER, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01): : 137 - 144
[6] DIFFUSION + SOLUBILITY OF COPPER IN EXTRINSIC + INTRINSIC GERMANIUM SILICON + GALLIUM ARSENIDE
HALL, RN
RACETTE, JH
[J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 379 - &
[7] 2-STEP PHOTOCONDUCTIVITY BY DISLOCATIONS IN SILICON
KOS, HJ
NEUBERT, D
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (01): : 259 - 264
[8] Lemke H., 1970, Physica Status Solidi A, V1, P283, DOI 10.1002/pssa.19700010211
[9] INFLUENCE OF MICRODEFECTS ON CHARGE-CARRIERS IN SILICON
MENNIGER, H
RAIDT, H
VOIGT, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 35 (02): : 639 - 643
[10] PRECIPITATION IN HIGH-PURITY SILICON SINGLE CRYSTALS
NES, E
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3562 - &