ON THE INTERACTION BETWEEN CRYSTAL DEFECTS AND IMPURITIES IN SILICON INVESTIGATED BY ELECTRON-MICROSCOPIC METHODS

被引：25

作者：

MENNIGER, H ^{[1
]}

RAIDT, H ^{[1
]}

GLEICHMANN, R ^{[1
]}

机构：

[1] ACAD SCI GDR,INST FESTKORPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-401 HALLE,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 58卷 / 01期

关键词：

D O I：

10.1002/pssa.2210580121

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：173 / 180

页数：8

共 13 条

[11] COPPER PRECIPITATION EFFECTS IN SILICON USED IN SOLAR-CELLS
SALAMA, AM
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (01) : 114 - 118
[12] INTERACTION BETWEEN VACANCY EMITTING-ABSORBING PRECIPITATES AND DISLOCATIONS IN SILICON AS INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY
SOLBERG, JK
NES, E
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1978, 37 (04): : 465 - 478
[13] YANG KH, 1978, PHYS STATUS SOLIDI A, V50, P221, DOI 10.1002/pssa.2210500126