INTERACTION BETWEEN VACANCY EMITTING-ABSORBING PRECIPITATES AND DISLOCATIONS IN SILICON AS INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY

被引：20

作者：

SOLBERG, JK ^{[1
]}

NES, E ^{[1
]}

机构：

[1] UNIV OSLO,DEPT PHYS,OSLO,NORWAY

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1978年 / 37卷 / 04期

关键词：

D O I：

10.1080/01418617808239183

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：465 / 478

页数：14

相关论文

共 18 条

[1] DRAGGING OF SMALL OXIDE PARTICLES BY MIGRATING GRAIN BOUNDARIES IN COPPER
ASHBY, MF
CENTAMORE, RM
[J]. ACTA METALLURGICA, 1968, 16 (09): : 1081 - +
[2] DIFFRACTION CONTRAST FROM SPHERICALLY SYMMETRICAL COHERENCY STRAINS
ASHBY, MF
BROWN, LM
[J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (91): : 1083 - &
[3] MIGRATION AND COALESCENCE OF INERT GAS BUBBLES IN METALS
BARNES, RS
MAZEY, DJ
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1963, 275 (1360) : 47 - +
[4] SELF-DIFFUSION IN INTRINSIC AND EXTRINSIC SILICON
FAIRFIEL.JM
MASTERS, BJ
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (08) : 3148 - &
[5] Hirth J.P., 1982, THEORY DISLOCATIONS
[6] DISLOCATION PIPE DIFFUSION
LOVE, GR
[J]. ACTA METALLURGICA, 1964, 12 (06): : 731 - +
[7] MECHANISM OF REPEATED PRECIPITATION ON DISLOCATIONS
NES, E
[J]. ACTA METALLURGICA, 1974, 22 (01): : 81 - 87
[8] PRECIPITATION IN HIGH-PURITY SILICON SINGLE CRYSTALS
NES, E
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3562 - &
[9] PRECIPITATE COLONIES IN SILICON
NES, E
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 2005 - &
[10] TRANSMISSION ELECTRON-MICROSCOPE INVESTIGATION OF GROWTH OF COPPER PRECIPITATE COLONIES IN SILICON
NES, E
WASHBURN, J
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (08) : 3682 - 3688