PRECIPITATE COLONIES IN SILICON

被引:45
作者
NES, E
WASHBURN, J
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D O I
10.1063/1.1661438
中图分类号
O59 [应用物理学];
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页码:2005 / &
相关论文
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[2]   PRECIPITATION IN HIGH-PURITY SILICON SINGLE CRYSTALS [J].
NES, E ;
WASHBURN, J .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) :3562-&
[3]  
NES E, 1970, THESIS U CALIFORNIA
[4]   TRIPLE ACCEPTORS IN GERMANIUM [J].
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TYLER, WW .
PHYSICAL REVIEW, 1957, 105 (01) :84-92