ON THE ORIGIN OF EBIC DEFECT CONTRAST IN SILICON - A REFLECTION ON INJECTION AND TEMPERATURE-DEPENDENT INVESTIGATIONS

被引：49

作者：

KITTLER, M

SEIFERT, W

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 138卷 / 02期

关键词：

D O I：

10.1002/pssa.2211380240

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Available data about the dependence of EBIC contrast c of extended defects on sample temperature T and beam current lb are analysed. Two main types of behaviour are distinguished characterized by negative C(I(b))/POSitive c(T) slope and positive C(I(b))/negative c(T) slope, respectively. The former is attributed to defect charging (deep states) and the latter to shallow centres. Further, chemomechanical polishing is shown to influence the defect recombination activity.

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页码：687 / 693

页数：7

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