TEMPERATURE-DEPENDENT EBIC DIFFUSION-LENGTH MEASUREMENTS IN SILICON

[1] INJECTION AND DOPING DEPENDENCE OF SEM AND SCANNING LIGHT SPOT DIFFUSION LENGTH MEASUREMENTS IN SILICON POWER RECTIFIERS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (04) : 261 - 272

[2] ELECTRON-BEAM-INDUCED CURRENTS IN SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1981, 11 : 353 - 380

[3] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 217 - 219

[4] DETERMINATION OF SEMICONDUCTOR PARAMETERS AND OF THE VERTICAL STRUCTURE OF DEVICES BY NUMERICAL-ANALYSIS OF ENERGY-DEPENDENT EBIC MEASUREMENTS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (01): : 139 - 151

[5] MAHLKE B, 1981, 10 P TAG EL LEIPZ, P256

[6] MENNIGER H, 1978, 9 TAG EL DRESD, P74

[7] MENNINGER H, COMMUNICATION

[8] MOSCHWITZER A, 1981, HALBLEITERLEKTRONIK

[9] THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 289 - 295

[10] ELECTRICAL RECOMBINATION EFFICIENCY OF INDIVIDUAL EDGE DISLOCATIONS AND STACKING-FAULT DEFECTS IN N-TYPE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 771 - 784

[1] INJECTION AND DOPING DEPENDENCE OF SEM AND SCANNING LIGHT SPOT DIFFUSION LENGTH MEASUREMENTS IN SILICON POWER RECTIFIERS [J]. SOLID-STATE ELECTRONICS, 1982, 25 (04) : 261 - 272

[2] ELECTRON-BEAM-INDUCED CURRENTS IN SEMICONDUCTORS [J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1981, 11 : 353 - 380

[3] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 30 (05) : 217 - 219

[4] DETERMINATION OF SEMICONDUCTOR PARAMETERS AND OF THE VERTICAL STRUCTURE OF DEVICES BY NUMERICAL-ANALYSIS OF ENERGY-DEPENDENT EBIC MEASUREMENTS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 77 (01): : 139 - 151

[5] MAHLKE B, 1981, 10 P TAG EL LEIPZ, P256

[6] MENNIGER H, 1978, 9 TAG EL DRESD, P74

[7] MENNINGER H, COMMUNICATION

[8] MOSCHWITZER A, 1981, HALBLEITERLEKTRONIK

[9] THE TEMPERATURE-DEPENDENCE OF EBIC CONTRAST FROM INDIVIDUAL DISLOCATIONS IN SILICON [J]. JOURNAL DE PHYSIQUE, 1983, 44 (NC-4): : 289 - 295

[10] ELECTRICAL RECOMBINATION EFFICIENCY OF INDIVIDUAL EDGE DISLOCATIONS AND STACKING-FAULT DEFECTS IN N-TYPE SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 771 - 784