INJECTION AND DOPING DEPENDENCE OF SEM AND SCANNING LIGHT SPOT DIFFUSION LENGTH MEASUREMENTS IN SILICON POWER RECTIFIERS

被引：30

作者：

DAVIDSON, SM

INNES, RM

LINDSAY, SM

机构：

[1] UNIV MANCHESTER,INST SCI & TECHNOL,DEPT ELECT ENGN,MANCHESTER M60 1QD,LANCS,ENGLAND

[2] MULLARD HAZEL GROVE,STOCKPORT,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 04期

关键词：

D O I：

10.1016/0038-1101(82)90134-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：261 / 272

页数：12

共 12 条

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