EBIC TEM STUDIES ON THE RELATION BETWEEN ELECTRICAL-PROPERTIES, CRYSTALLOGRAPHIC STRUCTURE, AND INTERACTION WITH POINT-DEFECTS OF EPITAXIAL STACKING-FAULTS IN SILICON

被引：14

作者：

KITTLER, M

BUGIEL, E

机构：

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 1982年 / 17卷 / 01期

关键词：

D O I：

10.1002/crat.2170170111

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：79 / 89

页数：11

共 10 条

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[2]

BUGIEL E, 1981, 10 TAG EL LEIPZ

[3] ON THE SENSITIVITY OF THE EBIC TECHNIQUE AS APPLIED TO DEFECT INVESTIGATIONS IN SILICON [J].

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SEIFERT, W .

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[4]

KITTLER M, 1981, CRYST RES TECHNOL, V16, P157

[5] ON THE CHARACTERIZATION OF ELECTRICALLY ACTIVE INHOMOGENEITIES IN SEMICONDUCTOR SILICON BY CHARGE COLLECTION AT SCHOTTKY BARRIERS USING THE SEM-EBIC(II) - CONTRAST DUE TO DEFECTS [J].

KITTLER, M .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (05) :575-584

[6]

LEAMY HJ, 1978, SCANNING ELECTRON MI, V1

[7] ELECTRICAL-ACTIVITY OF EPITAXIAL STACKING-FAULTS [J].

MARCUS, RB ;

ROBINSON, M ;

SHENG, TT ;

HASZKO, SE ;

MURARKA, SP ;

KATZ, LE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (03) :425-430

[8] ON THE INTERACTION BETWEEN CRYSTAL DEFECTS AND IMPURITIES IN SILICON INVESTIGATED BY ELECTRON-MICROSCOPIC METHODS [J].

MENNIGER, H ;

RAIDT, H ;

GLEICHMANN, R .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 58 (01) :173-180

[9] ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON. [J].

Ravi, K.V. ;

Varker, C.J. ;

Volk, C.E. .

Journal of the Electrochemical Society, 1973, 120 (04) :533-541

[10]

SIRTL E, 1961, Z METALLKD, V52, P529

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