ON THE CHARACTERIZATION OF ELECTRICALLY ACTIVE INHOMOGENEITIES IN SEMICONDUCTOR SILICON BY CHARGE COLLECTION AT SCHOTTKY BARRIERS USING THE SEM-EBIC(II) - CONTRAST DUE TO DEFECTS

被引：16

作者：

KITTLER, M

机构：

来源：

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY | 1980年 / 15卷 / 05期

关键词：

D O I：

10.1002/crat.19800150515

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：575 / 584

页数：10

共 11 条

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APPLIED PHYSICS LETTERS, 1979, 34 (01) :80-81

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OGDEN, R .

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[4] SEM OBSERVATION AND CONTRAST MECHANISM OF STACKING-FAULTS IN AN EPITAXIAL SILICON LAYER [J].

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JOURNAL OF APPLIED PHYSICS, 1974, 45 (09) :3732-3737

[5] ELECTRICAL-PROPERTIES OF STACKING-FAULTS AND PRECIPITATES IN HEAT-TREATED DISLOCATION-FREE CZOCHRALSKI SILICON [J].

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LEAMY, HJ ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1977, 30 (05) :217-219

[6] ON THE CHARACTERIZATION OF ELECTRICALLY ACTIVE INHOMOGENEITIES IN SEMICONDUCTOR SILICON BY CHARGE COLLECTION AT SCHOTTKY BARRIERS USING THE SEM-EBIC(I) - FUNDAMENTALS AND CONTRAST DUE TO MACROSCOPICAL INHOMOGENEITIES [J].

KITTLER, M .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (02) :185-192

[7]

LEAMY HJ, 1977, 8TH INT C XRAY OPT M

[8]

LEAMY HJ, 1976, SCANNING ELECTRON MI, V1, P529

[9]

MENNIGER H, 1978, 9 TAG EL DRESD, P74

[10] ELECTRICALLY ACTIVE STACKING FAULTS IN SILICON. [J].

Ravi, K.V. ;

Varker, C.J. ;

Volk, C.E. .

Journal of the Electrochemical Society, 1973, 120 (04) :533-541

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