SEM OBSERVATION AND CONTRAST MECHANISM OF STACKING-FAULTS IN AN EPITAXIAL SILICON LAYER

被引：18

作者：

KATO, T

KOYAMA, H

MATSUKAWA, T

SHIMIZU, R

机构：

[1] MITSUBISHI ELECT CORP, KITA ITAMI WORKS, ITAMI, HYOGO, JAPAN

[2] OSAKA UNIV, DEPT APPL PHYS, SUITA, OSAKA, JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 09期

关键词：

D O I：

10.1063/1.1663852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3732 / 3737

页数：6

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