DIRECT OBSERVATION OF ELECTRICAL LEAKAGE PATHS DUE TO CRYSTAL DEFECTS NY USE OF SCANNING ELECTRON MICROSCOPE

被引：26

作者：

DAVIES, IG

HUGHES, KA

SULWAY, DV

THORNTON, PR

机构：

来源：

SOLID-STATE ELECTRONICS | 1966年 / 9卷 / 03期

关键词：

D O I：

10.1016/0038-1101(66)90112-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：275 / &

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[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) : 1476 - &
[2] EVALUATION OF PASSIVATED INTEGRATED CIRCUITS USING THE SCANNING ELECTRON MICROSCOPE
EVERHART, TE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) : 929 - 936
[3] INFLUENCE OF MECHANICAL DAMAGE ON AVALANCHE BREAKDOWN IN SILICON PN JUNCTIONS
GOETZBERGER, A
FINCH, RH
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (07) : 543 - &
[4] APPLICATIONS OF SCANNING ELECTRON MICROSCOPE TO SOLID-STATE DEVICES
MACKINTOSH, IM
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (04): : 370 - +