DIFFERENCE OF THE ELECTRICAL-PROPERTIES OF SCREW AND 60-DEGREES DISLOCATIONS IN SILICON AS DETECTED WITH TEMPERATURE-DEPENDENT ELECTRON-BEAM INDUCED CURRENT TECHNIQUE

Well-defined hexagonal-shaped dislocation loops were introduced into an n-type silicon crystal grown by the floating-zone technique. The electron beam induced current (EBIC) contrasts of screw parts and 60-degrees parts of the loops showed different dependencies on the temperature of observation. Such difference is interpreted with the idea that the physical parameters controlling carrier recombination at the dislocation core are different between screw and 60-degrees dislocations.