2 CLASSES OF RECOMBINATION BEHAVIOR AS STUDIED BY THE TECHNIQUE OF THE ELECTRON-BEAM-INDUCED CURRENT - NISI2 PARTICLES AND MISFIT DISLOCATIONS IN NI CONTAMINATED N-TYPE SILICON

被引：7

作者：

KITTLER, M ^{[1
]}

SEIFERT, W ^{[1
]}

RADZIMSKI, ZJ ^{[1
]}

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27695

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 20期

关键词：

D O I：

10.1063/1.109632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The recombination activity of well-defined NiSi2 precipitates and of misfit dislocations in Ni contaminated Si samples has been investigated using the technique of the electron-beam-induced current in dependence on sample temperature and beam current. Individual NiSi2 precipitates are found to show a high recombination activity, increasing slightly with temperature and decreasing with increasing beam current. On the other hand, misfit dislocations are nearly inactive at room temperature and increase their activity upon cooling the sample. The experimental findings are discussed in terms of recombination activity controlled by either defect charging or shallow centers.

引用

页码：2513 / 2515

页数：3

共 23 条

[1]

BONDARENKO IE, 1990, DEFECT CONTROL SEMIC, P1443

[2] A THEORETICAL-STUDY OF THE CHARGE COLLECTION CONTRAST OF LOCALIZED SEMICONDUCTOR DEFECTS WITH ARBITRARY RECOMBINATION ACTIVITY [J].