RECOMBINATION PROPERTIES OF STRUCTURALLY WELL DEFINED NISI2 PRECIPITATES IN SILICON

被引：70

作者：

KITTLER, M ^{[1
]}

LARZ, J ^{[1
]}

SEIFERT, W ^{[1
]}

SEIBT, M ^{[1
]}

SCHROTER, W ^{[1
]}

机构：

[1] UNIV GOTTINGEN,INST PHYS 4,W-3400 GOTTINGEN,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 09期

关键词：

D O I：

10.1063/1.104474

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report first results on the recombination properties of structurally well defined NiSi2 precipitates in n-type silicon. Under the conditions applied, precipitates form without the occurrence of punched out dislocations or any other secondary defects. We find that the minority-carrier diffusion length (L(D)) measured by electron beam induced current (EBIC) is related to the precipitate density N(V) and L(D) congruent-to 0.7 x N(V)-1/3. EBIC investigations of individual precipitates reveal contrasts up to 40% demonstrating NiSi2 particles to be efficient recombination centers.

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页码：911 / 913

页数：3

相关论文

共 17 条

[1]

DONOLATO C, 1978, OPTIK, V52, P19

[2] RECOMBINATION PROPERTIES OF OXYGEN-PRECIPITATED SILICON [J].

HWANG, JM ;

SCHRODER, DK .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) :2476-2487

[3] HEAVY-METAL CONTAMINATION DURING INTEGRATED-CIRCUIT PROCESSING - MEASUREMENTS OF CONTAMINATION LEVEL AND INTERNAL GETTERING EFFICIENCY BY SURFACE PHOTOVOLTAGE [J].

JASTRZEBSKI, L .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1989, 4 (1-4) :113-121

[4]

KITTLER M, 1988, SCANNING MICROSCOPY, V2, P1397

[5] QUANTITATIVE EBIC INVESTIGATIONS ON BULK STACKING-FAULTS IN SILICON [J].

KITTLER, M ;

SCHRODER, KW ;

BUGIEL, E ;

BECKER, C .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (02) :K131-&

[6] ON THE CHARACTERIZATION OF ELECTRICALLY ACTIVE INHOMOGENEITIES IN SEMICONDUCTOR SILICON BY CHARGE COLLECTION AT SCHOTTKY BARRIERS USING THE SEM-EBIC(II) - CONTRAST DUE TO DEFECTS [J].

KITTLER, M .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (05) :575-584

[7] ON THE CHARACTERIZATION OF ELECTRICALLY ACTIVE INHOMOGENEITIES IN SEMICONDUCTOR SILICON BY CHARGE COLLECTION AT SCHOTTKY BARRIERS USING THE SEM-EBIC(I) - FUNDAMENTALS AND CONTRAST DUE TO MACROSCOPICAL INHOMOGENEITIES [J].

KITTLER, M .

KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1980, 15 (02) :185-192

[8]

KITTLER M, 1981, CRYST RES TECHNOL, V16, P15

[9]

LEE DM, 1990, SEMICONDUCTOR SILICO, P638

[10] FAST DIFFUSERS CU AND NI AS THE ORIGIN OF ELECTRICAL-ACTIVITY IN A SILICON GRAIN-BOUNDARY [J].

MAURICE, JL ;

COLLIEX, C .

APPLIED PHYSICS LETTERS, 1989, 55 (03) :241-243