FAST DIFFUSERS CU AND NI AS THE ORIGIN OF ELECTRICAL-ACTIVITY IN A SILICON GRAIN-BOUNDARY

被引:74
作者
MAURICE, JL [1 ]
COLLIEX, C [1 ]
机构
[1] UNIV PARIS 11,PHYS SOLIDES LAB,F-91405 ORSAY,FRANCE
关键词
D O I
10.1063/1.101919
中图分类号
O59 [应用物理学];
学科分类号
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页码:241 / 243
页数:3
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