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INFLUENCE OF THE GENERATION DISTRIBUTION ON THE CALCULATED EBIC CONTRAST OF LINE DEFECTS
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AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .2. EBIC IMAGES OF DISLOCATIONS
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AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .1. MINORITY-CARRIER GENERATION, DIFFUSION, AND COLLECTION
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PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
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ON THE SENSITIVITY OF THE EBIC TECHNIQUE AS APPLIED TO DEFECT INVESTIGATIONS IN SILICON
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ELECTRON-STATES ASSOCIATED WITH PARTIAL DISLOCATIONS IN SILICON
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