AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .2. EBIC IMAGES OF DISLOCATIONS

被引：23

作者：

DONOLATO, C

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 66卷 / 02期

关键词：

D O I：

10.1002/pssa.2210660205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：445 / 454

页数：10

共 13 条

[1] COMBINED SCANNING (EBIC) AND TRANSMISSION ELECTRON-MICROSCOPIC INVESTIGATIONS OF DISLOCATIONS IN SEMICONDUCTORS [J].

BLUMTRITT, H ;

GLEICHMANN, R ;

HEYDENREICH, J ;

JOHANSEN, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02) :611-620

[2] COMPUTER-SIMULATION OF SEM ELECTRON-BEAM INDUCED CURRENT IMAGES OF DISLOCATIONS AND STACKING-FAULTS [J].

DONOLATO, C ;

KLANN, H .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1624-1633

[3]

DONOLATO C, 1978, OPTIK, V52, P19

[4] AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .1. MINORITY-CARRIER GENERATION, DIFFUSION, AND COLLECTION [J].

DONOLATO, C .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (02) :649-658

[5]

Donolato C, 1979, SCANNING ELECTRON MI, V1, P257

[6] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].

EVERHART, TE ;

HOFF, PH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&

[7] OBSERVATION OF DISLOCATIONS AND MICROPLASMA SITES IN SEMICONDUCTORS BY DIRECT CORRELATIONS OF STEBIC, STEM AND ELS [J].

FATHY, D ;

SPARROW, TG ;

VALDRE, U .

JOURNAL OF MICROSCOPY-OXFORD, 1980, 118 (MAR) :263-273

[8]

FATHY D, 1980, J MICROSC SPECT ELEC, V5, P175

[9]

GRADSHTEYN IS, 1980, TABLE INTEGRALS SERI, P717

[10] SCANNING ELECTRON MICROSCOPE AS A MEANS OF STUDYING MICROPLASMAS AT HIGH RESOLUTION [J].

NEVE, NFB ;

HUGHES, KA ;

THORNTON, PR .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1704-&

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