Nanoscale patterning of alkyl monolayers on silicon using the atomic force microscope

被引:57
作者
Headrick, JE [1 ]
Armstrong, M [1 ]
Cratty, J [1 ]
Hammond, S [1 ]
Sheriff, BA [1 ]
Berrie, CL [1 ]
机构
[1] Univ Kansas, Dept Chem, Lawrence, KS 66045 USA
关键词
D O I
10.1021/la0481905
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Self-assembled monolayers (SAMs) of 1-alkenes on hydrogen-passivated silicon substrates were successfully patterned on the nanometer scale using an atomic force microscope (AFM) probe tip. Nanoshaving experiments on alkyl monolayers formed on H-Si(111) not only demonstrate the flexibility of this technique but also show that patterning with an AFM probe is a viable method for creating well-defined, nanoscale features in a monolayer matrix in a reproducible and controlled manner. Features of varying depths (2-15 nm) were created in the alkyl monolayers by controlling the applied load and the number of etching scans made at high applied loads. The patterning on these SAM films is compared with the patterning of alkyl siloxane monolayers on silicon and mica.
引用
收藏
页码:4117 / 4122
页数:6
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