The effect of oxygen on the temperature fluctuation of Marangoni convection in a molten silicon bridge

被引:31
作者
Azami, T [1 ]
Nakamura, S [1 ]
Hibiya, T [1 ]
机构
[1] NEC Corp Ltd, Syst Devices & Fundamental Res, Tsukuba, Ibaraki 3058501, Japan
关键词
fluid flows; semiconducting silicon;
D O I
10.1016/S0022-0248(01)00598-X
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Temperature fluctuations in a half-zone liquid bridge of molten silicon were measured under precisely controlled oxygen partial pressure in the ambient atmosphere. A transition from a mode with non-periodic fluctuations in temperature to one with periodic fluctuations occurred when the oxygen partial pressure at the inlet was increased from 3.5 x 10(-7) to 1.8 x 10(-5) MPa. The transition indicates that the absolute temperature coefficient of surface tension decreases with increasing oxygen partial pressure at the silicon surface. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:116 / 124
页数:9
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