Chemical vapor deposition of functionalized single-walled carbon nanotubes with defined nitrogen doping

被引:23
作者
Ayala, Paola
Freire, Fernando L., Jr.
Ruemmeli, Mark H.
Grueneis, Alexander
Pichler, Thomas
机构
[1] Pontificia Univ Catolica Rio de Janeiro, Dept Fis, BR-22451900 Rio de Janeiro, Brazil
[2] IFW Dresden, D-01069 Dresden, Germany
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2007年 / 244卷 / 11期
关键词
D O I
10.1002/pssb.200776180
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Defined n-doping of carbon nanotubes can find potential application in nanoelectronics and sensors. An efficient doping can be achieved by substituting Carbon by heteroatoms such as Nitrogen. We explored the formation process of N doped single-walled nanotubes within hot wall chemical vapor deposition employing different (C/N) feedstocks and catalysts. The process was optimized regarding the formation of substitutionally doped SWCNT and double wall CNTs. Analysis of N content and bonding environment is presented. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码:4051 / 4055
页数:5
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