Electronic transport in Ta2O5 resistive switch

被引：195

作者：

Sakamoto, Toshitsugu

Lister, Kevin

Banno, Naoki

Hasegawa, Tsuyoshi

Terabe, Kazuya

Aono, Masakazu

机构：

[1] NEC Corp Ltd, Nano Elect Res Labs, Tsukuba, Ibaraki 3058501, Japan

[2] Natl Inst Mat Sci, Nanomat Lab, Tsukuba, Ibaraki 3050044, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 09期

基金：

日本科学技术振兴机构;

关键词：

Coulomb blockade - Electrochemistry - Electron tunneling - Solid electrolytes - Switching systems - Tantalum compounds;

D O I：

10.1063/1.2777170

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors examined the electronic transport of a solid electrolyte resistive switch. Using element analysis and the temperature dependence of its electronic transport, they deduced that the conductive path is composed of Cu metal precipitated in the solid electrolyte film by an electrochemical reaction. Furthermore, they observed Coulomb blockade phenomena at 4 K when the switch was in the off state. Their observations and experimental results suggest that the metallic conductive path consists of metallic islands separated by tunneling barriers and that switching between the on and off states originates from modulation in the tunneling barriers.

引用

页数：3