Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

被引:45
作者
Damlencourt, JF
Renault, O
Samour, D
Papon, AM
Leroux, C
Martin, F
Marthon, S
Séméria, MN
Garros, X
机构
[1] CEA, DRT, LETI, DTS,GRE, F-38054 Grenoble 9, France
[2] ST Microelect, F-38926 Crolles, France
关键词
high-K dielectrics; atomic layer deposition; interface characterization; HFO2; THIN-FILMS; SI SUBSTRATE; INTERFACE; HAFNIUM;
D O I
10.1016/S0038-1101(03)00170-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we have correlated electrical measurements of thin HfO2 layers deposited on SiO2 by atomic layer deposition with angle-resolved X-ray photoelectron spectroscopy experiments. Results show that the HFO2/Si interface layer (IL) is made of a SiOx layer underneath a Si-rich Hf-sificate layer. The increasing of the IL thickness, during annealing, was essentially due to the silicon oxidation by -OH groups remaining in the HfO2 layer after deposition. Using shorter water pulse time, we were able to limit the SiOx growth during deposition. We have also observed, after annealing at 800 degreesC under nitrogen, a decreasing of the interfacial layer electrical thickness as well as an improvement of the equivalent oxide thickness of the stack. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:1613 / 1616
页数:4
相关论文
共 12 条
  • [1] Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
    Alers, GB
    Werder, DJ
    Chabal, Y
    Lu, HC
    Gusev, EP
    Garfunkel, E
    Gustafsson, T
    Urdahl, RS
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (11) : 1517 - 1519
  • [2] Thermal stability and structural characteristics of HfO2 films on Si (100) grown by atomic-layer deposition
    Cho, MH
    Roh, YS
    Whang, CN
    Jeong, K
    Nahm, SW
    Ko, DH
    Lee, JH
    Lee, NI
    Fujihara, K
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (03) : 472 - 474
  • [3] Chemical interaction between atomic-layer-deposited HfO2 thin films and the Si substrate
    Cho, MJ
    Park, J
    Park, HB
    Hwang, CS
    Jeong, J
    Hyun, KS
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (02) : 334 - 336
  • [4] Gusev E.P., 2001, IEDM Tech. Dig, P451, DOI DOI 10.1109/IEDM.2001.979537
  • [5] Plasma-enhanced chemical vapor deposition and characterization of high-permittivity hafnium and zirconium silicate films
    Kato, H
    Nango, T
    Miyagawa, T
    Katagiri, T
    Seol, KS
    Ohki, Y
    [J]. JOURNAL OF APPLIED PHYSICS, 2002, 92 (02) : 1106 - 1111
  • [6] Interfacial reaction between chemically vapor-deposited HfO2 thin films and a HF-cleaned Si substrate during film growth and postannealing
    Park, BK
    Park, J
    Cho, M
    Hwang, CS
    Oh, K
    Han, Y
    Yang, DY
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (13) : 2368 - 2370
  • [7] HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy
    Renault, O
    Samour, D
    Damlencourt, JF
    Blin, D
    Martin, F
    Marthon, S
    Barrett, NT
    Besson, P
    [J]. APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3627 - 3629
  • [8] RENAULT O, IN PRESS THIN SOLID
  • [9] Soft x-ray photoemission studies of the HfO2/SiO2/Si system
    Sayan, S
    Garfunkel, E
    Suzer, S
    [J]. APPLIED PHYSICS LETTERS, 2002, 80 (12) : 2135 - 2137
  • [10] High dielectric constant Hf-Sn-Ti-O thin films
    Schneemeyer, LF
    van Dover, RB
    Fleming, RM
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (13) : 1967 - 1969