NOx sensing properties of In2O3 thin films grown by MOCVD

被引：55

作者：

Ali, M. ^{[1
]}

Wang, Ch. Y. ^{[1
]}

Roehlig, C. -C. ^{[1
]}

Cimalla, V. ^{[1
]}

Stauden, Th. ^{[1
]}

Ambacher, O. ^{[1
]}

机构：

[1] Tech Univ Ilmenau, Inst Micro & Nanotechnol, D-98693 Ilmenau, Germany

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2008年 / 129卷 / 01期

关键词：

gas sensor; NOx; detection; indium oxide; MOCVD; response time; recovery time;

D O I：

10.1016/j.snb.2007.08.011

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The NOx and O-2 sensing properties of highly textured indium oxide In2O3 thin films grown by metal organic chemical vapor deposition (MOCVD) technique have been investigated as a function of the operation temperature and partial pressure. The sensor is very sensitive to NOx and its response is strongly dependent on the gas partial pressure and operating temperature. The responses to NOx and O-2 have been found to be maximal at 150 degrees C. The optimum detection temperature for NOx occurs in the range 150-200 degrees C considering the response and recovery times. In this range a very low response to O-2 is observed indicating that the sensor is very suitable for selective NOx detection. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：467 / 472

页数：6

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