Monovacancy-induced magnetism in graphene bilayers

被引：28

作者：

Choi, Sangkook ^{[1
,2
,3
]}

Jeong, Byoung Wook ^{[1
,2
]}

Kim, Seungchul ^{[1
,2
]}

Kim, Gunn ^{[4
,5
]}

机构：

[1] Seoul Natl Univ, FPRD, Sch Phys & Astron, Seoul 151747, South Korea

[2] Seoul Natl Univ, Ctr Theoret Phys, Seoul 151747, South Korea

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[4] Sungkyunkwan Univ, BK21 Phys Res Div, Suwon 440746, South Korea

[5] Sungkyunkwan Univ, Inst Basic Sci, Suwon 440746, South Korea

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2008年 / 20卷 / 23期

关键词：

D O I：

10.1088/0953-8984/20/23/235220

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Vacancy-induced magnetism in graphene bilayers is investigated using spin-polarized density functional theory calculations. One of two graphene layers has a monovacancy. Two atomic configurations for bilayers are considered with respect to the position of the monovacancy. We find that spin magnetic moments localized at the vacancy site decrease by similar to 10% for our two configurations, compared with the graphene monolayer with a monovacancy. The reduction of the spin magnetic moment in the graphene bilayers is attributed to the interlayer charge transfer from the adjacent layer to the layer with the monovacancy, compensating for spin magnetic moments originating from quasilocalized defect states.

引用

页数：4