Large-Scale Graphene Micropatterns via Self-Assembly-Mediated Process for Flexible Device Application

被引：68

作者：

Kim, TaeYoung ^{[2
]}

Kirn, Hyeongkeun ^{[2
]}

Kwon, Soon Woo ^{[3
]}

Kim, Yena ^{[3
]}

Park, Won Kyu ^{[3
]}

Yoon, Dae Ho ^{[3
]}

Jang, A-Rang ^{[4
]}

Shin, Hyeon Suk ^{[4
]}

Suh, Kwang S. ^{[1
]}

Yang, Woo Seok ^{[2
]}

机构：

[1] Korea Univ, Dept Mat & Engn, Seoul 136713, South Korea

[2] Korea Elect Technol Inst, Elect Mat & Device Res Ctr, Gyeonggi Do 463816, South Korea

[3] Sungkyunkwan Univ, Sch Adv Mat Sci & Engn, Gyeonggi Do 440746, South Korea

[4] UNIST, Interdisciplinary Sch Green Energy, KIER UNIST Adv Ctr Energy, Ulsan 689805, South Korea

来源：

NANO LETTERS | 2012年 / 12卷 / 02期

关键词：

Graphene; self-assembly; patterning; large-area; flexible electronics; field effect transistor; FIELD-EFFECT TRANSISTORS; GEL GATE DIELECTRICS; CONTROLLED EVAPORATION; RAMAN-SPECTROSCOPY; LOW-VOLTAGE; LAYER; FILMS; FLOW; GAS;

D O I：

10.1021/nl203691d

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on a method for the large-scale production of graphene micropatterns by a self-assembly mediated process. The evaporation-induced self-assembly technique was engineered to produce highly ordered graphene patterns on flexible substrates in a simplified and scalable manner. The crossed stripe graphene patterns have been produced over a large area with regions consisting of single- and two-layer graphene. Based on these graphene patterns, flexible graphene-based field effect transistors have been fabricated with an ion-gel gate dielectric, which operates at low voltages of < 2 V with a hole and electron mobility of 214 and 106 cm(2)/V.s, respectively. The self-assembly approach described here may pave the way for the nonlithographic production of graphene patterns, which is scalable to large areas and compatible with roll-to-roll system.

引用

页码：743 / 748

页数：6

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