Enhancement of deep acceptor activation in semiconductors by superlattice doping

被引：127

作者：

Schubert, EF

Grieshaber, W

Goepfert, ID

机构：

[1] Center for Photonics Research, Dept. of Elec. and Comp. Engineering, Boston University, Boston

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 24期

关键词：

D O I：

10.1063/1.117206

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The thermal activation of accepters in wide-gap semiconductors can be very low due to large acceptor activation energies. It is shown that superlattice doping, i.e., the composition modulation of a uniformly doped ternary semiconductor, can enhance the acceptor activation by more than one order of magnitude. (C) 1996 American Institute of Physics.

引用

页码：3737 / 3739

页数：3

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