Field effect transistor from individual trigonal Se nanowire

被引：14

作者：

Qin, Donghuan ^{[1
]}

Tao, Hong ^{[1
]}

Zhao, Yun ^{[1
]}

Lan, Linfeng ^{[1
]}

Chan, Keith ^{[2
,3
]}

Cao, Yong ^{[1
]}

机构：

[1] S China Univ Technol, Key Lab Special Funct Mat, Inst Polymer Optoelect Mat & Devices, Guangzhou 510640, Peoples R China

[2] Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA

[3] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA

来源：

NANOTECHNOLOGY | 2008年 / 19卷 / 35期

关键词：

D O I：

10.1088/0957-4484/19/35/355201

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Trigonal Se nanowires (NWs) were fabricated through a high-yield chemical solution process. The morphology and structural characterization of the Se NWs were investigated using transmission electron microscopy (TEM), high-resolution TEM (HRTEM), and x-ray diffraction (XRD). The results indicated that the Se NWs grow along the crystallographic c-axis, the direction of which is parallel to the helical chains of Se atoms. Single Se NW field effect transistor (FET) devices were prepared through photolithographic patterning. The device performance shows that the Se NWs are p-type semiconductors displaying mobility up to 30 cm(2) V-1 s(-1). This finding on the Se NW FETs has broad implications and provides very useful fundamental information necessary for future applications in the fabrication of high-quality NW FETs and other electronic devices.

引用

页数：5

共 28 条

[1] High symmetric 18-facet polyhedron nanocrystals of Cu7S4 with a hollow nanocage [J].