High electron mobility InAs nanowire field-effect transistors

被引:287
作者
Dayeh, Shadi A. [1 ]
Aplin, David P. R. [1 ]
Zhou, Xiaotian [1 ]
Yu, Paul K. L. [1 ]
Yu, Edward T. [1 ]
Wang, Deli [1 ]
机构
[1] Univ Calif San Diego, Dept Elect & Comp Engn, La Jolla, CA 92093 USA
关键词
electron mobility; field-effect transistors; nanoelectronics; nanowires;
D O I
10.1002/smll.200600379
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Single-crystal InAs nanowires (NWs) are synthesized using metal-organic chemical vapor deposition (MOCVD) and fabricated into NW field-effect transistors (NWFETs) on a SiO2/n(+)-Si substrate with a global n(+)-Si back-gate and sputtered SiOx/Au underlap top-gate. For top-gate NWFETs, we have developed a model that allows accurate estimation of characteristic NW parameters, including carrier field-effect mobility and carrier concentration by taking into account series and leakage resistances, interface state capacitance, and top-gate geometry. Both the back-gate and the top-gate NWFETs exhibit room-temperature field-effect mobility as high as 6580 cm(2) V-1 s(-1), which is the lower-bound value without interface-capacitance correction, and is the highest mobility reported to date in any semiconductor NW.
引用
收藏
页码:326 / 332
页数:7
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