Electron paramagnetic resonance of Zn1-xMnxO thin films and single crystals -: art. no. 085214

被引:55
作者
Diaconu, M [1 ]
Schmidt, H [1 ]
Pöppl, A [1 ]
Böttcher, R [1 ]
Hoentsch, J [1 ]
Klunker, A [1 ]
Spemann, D [1 ]
Hochmuth, H [1 ]
Lorenz, M [1 ]
Grundmann, M [1 ]
机构
[1] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany
来源
PHYSICAL REVIEW B | 2005年 / 72卷 / 08期
关键词
D O I
10.1103/PhysRevB.72.085214
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
X-band electron paramagnetic resonance spectra were recorded for Zn1-xMnxO films grown by pulsed laser deposition and a single crystal for comparison. For different Mn concentrations in Zn1-xMnxO films we performed measurements in dependence on the angle between the applied magnetic field and the c axis of the wurtzite ZnMnO lattice. The fine and hyperfine structure splitting parameters and g values were determined by modeling the experimental spectra. For both single crystal and films the investigations showed the incorporation of Mn ions at Zn lattice sites as Mn2+. For higher Mn concentrations, a broad Lorentzian single line, probably due to divalent Mn ions in higher local concentrations undergoing exchange, was found superimposed onto the resolved Mn2+ spectrum at g=2.000. Furthermore, by extrapolating the lattice-distortion-dependent fine-structure parameters determined for samples with a Mn content of x <= 0.035, we anticipate that for Zn1-xMnxO single crystals and thin films on c-plane sapphire with x=0.045 the D fine-structure parameters should be equal.
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页数:6
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