Planar-type spin valves based on low-molecular-weight organic materials with La0.67Sr0.33MnO3 electrodes

被引：45

作者：

Ikegami, Tomonori ^{[1
]}

Kawayama, Iwao ^{[2
]}

Tonouchi, Masayoshi ^{[2
]}

Nakao, Satoru ^{[3
]}

Yamashita, Yoshiro ^{[4
]}

Tada, Hirokazu ^{[1
,5
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Div Mat Phys, Toyonaka, Osaka 5608531, Japan

[2] Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan

[3] Inst Mol Sci, Okazaki, Aichi 4448787, Japan

[4] Inst Technol, Dept Elect Chem, Yokohama, Kanagawa 2268502, Japan

[5] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 15期

关键词：

D O I：

10.1063/1.2905288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spin injection and transport properties of low-molecular-weight organic semiconductors such as pentacene and bis(1,2,5-thiadiazolo)-p-quinobis(1,3-dithiole) (BTQBT) were investigated utilizing planar-type spin-valve devices with half-metallic La0.67Sr0.33MnO3 electrodes. The devices showed clear spin-valve characteristics with a magnetoresistance (MR) ratio of up to 29% at 5 K. The MR ratio was found to depend on the gap spacing of the electrodes, the applied bias voltage, temperature, and the crystallinity of the films. It was also affected by gas adsorption onto the films, indicating that the spins were scattered by carriers and/or radical ions in the films generated through charge transfer from gas molecules. (C) 2008 American Institute of Physics.

引用

页数：3

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