The application of a statistical methodology to investigate deposition parameters in CdTe/CdS solar cells grown by MOCVD

被引：3

作者：

Rowlands, R. L. ^{[1
]}

Barrioz, V. ^{[1
]}

Jones, E. W. ^{[1
]}

Irvine, S. J. C. ^{[1
]}

Lamb, D. A. ^{[1
]}

机构：

[1] Univ Wales, Sch Chem, Bangor LL57 2UW, Gwynedd, Wales

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2008年 / 19卷 / 07期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1007/s10854-007-9412-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A L-8 matrix of experiments has been carried out to investigate various deposition parameters of Cadmium telluride (CdTe)/Cadmium sulphide (CdS) solar cells grown using metal organic chemical vapour deposition (MOCVD). The results of the matrix were analysed using a criterion to establish which growth parameters are significant and warrant further investigation. The most significant parameters were CdTe growth temperature and in situ arsenic doping of the CdTe absorber layer. Characterisation of the device structures showed that CdTe grain enlargement from 1 mu m to similar to 3 mu m occurred at the higher CdTe deposition temperature of 390 degrees C. SIMS depth profiles verified that arsenic concentrations, within the device structures, of 2.5 x 10(18) and 2 x 10(19) atoms cm(-3) were achieved for the different partial pressures. A model for the behaviour of arsenic in polycrystalline CdTe material, based on only partial passivation of grain boundaries and saturation of the grain boundaries at As concentrations above > 2.5 x 10(18) atoms cm(-3) is presented and discussed.

引用

页码：639 / 645

页数：7

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