Process dependence of roughness in a positive-tone chemically amplified resist

被引:103
作者
He, D [1 ]
Cerrina, F [1 ]
机构
[1] Univ Wisconsin, Ctr Xray Lithog, Madison, WI 53706 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 06期
关键词
D O I
10.1116/1.590401
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Line edge roughness becomes an important factor in linewidth control as lithographic dimensions approach the 0.1 mu m region. In order to understand different contributions to roughness, we. explored the relationship between roughness and deprotection in the case of a positive chemically amplified resist. Experiments show that the roughness of the remaining resist depends on process history and it is not a simple function of the degree of deprotection. Scaling analysis of atomic force microscopy images shows that an equal degree of deprotection yields a self-affine rough surface with constant fractal dimensions which imply a similar surface morphology, but with a different standard deviation. The correlation between sidewall and top surface roughness is also discussed. (C) 1998 American Vacuum Society. [S0734-211X(98)17906-4].
引用
收藏
页码:3748 / 3751
页数:4
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