Carrier scattering in graphene nanoribbon field-effect transistors

被引：34

作者：

Ouyang, Yijian ^{[1
]}

Wang, Xinran ^{[2
,3
]}

Dai, Hongjie ^{[2
,3
]}

Guo, Jing ^{[1
]}

机构：

[1] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA

[2] Stanford Univ, Dept Chem, Stanford, CA 94305 USA

[3] Stanford Univ, Adv Mat Lab, Stanford, CA 94305 USA

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 24期

关键词：

D O I：

10.1063/1.2949749

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The elastic scattering mean free path (mfp) in a graphene nanoribbon (GNR) is characterized to be short. In the absence of other scattering mechanisms, elastic scattering has a large effect on the source-drain current of a GNR field-effect transistor due to its quasi-one-dimensional channel. In the presence of optical phonon scattering, the effect of elastic scattering is reduced. The coupling of inelastic, short-mfp optical phonon scattering to elastic scattering results in an increase rather than a decrease of the source-drain current. Improving the GNR edge quality promises significant on-current improvement.

引用

页数：3

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