Preparation and characterisation of mixed oxide (Ce,Zr)O2 thin films on Si(111) substrates

被引：18

作者：

Galtayries, A

Crucifix, M

Blanchard, G

Terwagne, G

Sporken, R

机构：

[1] Fac Univ Notre Dame Paix, Lab Interdisciplinaire Spect Elect, B-5000 Namur, Belgium

[2] Rhodia, F-93308 Aubervilliers, France

[3] Fac Univ Notre Dame Paix, LARN, B-5000 Namur, Belgium

来源：

APPLIED SURFACE SCIENCE | 1999年 / 142卷 / 1-4期

关键词：

ceria-zirconia mixed oxide; thin film; XPS; interface; solid solution;

D O I：

10.1016/S0169-4332(98)00667-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have grown thin films of mixed oxides on Si (111) substrates by electron beam evaporation of pressed CexZr1-xO2 pellets. The growth was initiated under UHV environment, and proceeded then under O-2 atmosphere. A multitechnique approach (XPS, AES, LEED, XRD, RES) was used to characterise the chemical and structural composition of the film as well as their interface with the substrate. The films are about 100 Angstrom thick and present at least two phases corresponding to ZrO2 and CeO2. XPS depth profiles showed the following structure, starting from the substrate: a region of interdiffused Zr and Si, a CeSiOx layer mixed with ZrO2 and finally the homogeneous (Ce,Zr)O-2 film, enriched in Ce with respect to the pellet. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：159 / 163

页数：5

共 18 条

[1] FORMATION OF ZIRCONIA-CERIA LAYERS ON SILICON-WAFERS USING LASER-ABLATION [J].