QUANTITATIVE-ANALYSIS OF OXYGEN DEFICIENCY IN EPITAXIAL CEO(2) LAYERS ON SI BY DETECTING O-18 ADDED FOR STOICHIOMETRY

被引：6

作者：

INOUE, T

YAMAMOTO, Y

SATOH, M

HOSHI, T

MIYOSHI, K

机构：

[1] HOSEI UNIV,ION BEAM TECHNOL RES CTR,TOKYO 184,JAPAN

[2] ULVAC PHI INC,CHIGASAKI,KANAGAWA 253,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 33卷 / 5B期

关键词：

OXYGEN DEFICIENCY; OXIDE THIN FILMS; CERIUM DIOXIDE; VACUUM EVAPORATION; ISOTOPE; O-18; SIMS;

D O I：

10.1143/JJAP.33.L751

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Oxygen deficiency in epitaxially grown CeO2 layers on Si substrates by ultrahigh-vacuum evaporation is studied using secondary ion mass spectrometry (SIMS). O-18(2) gas is externally introduced in the evaporation process for compensation of oxygen deficiency of the CeO2 layer. Oxygen components in CeO2 layers are analyzed, separately detecting secondary ions of (CsO+)-O-16 and (CsO+)-O-18. The extrinsic oxygen content needed to obtain stoichiometric CeO2 is determined to be in the range of 11-18%. These SIMS data agree well with the oxygen deficiency of approximately 18% determined by Rutherford backscattering analysis of a nonstoichiometric CeO2 layer grown without oxygen gas introduction.

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页码：L751 / L753

页数：3

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