Novel green thin-film electroluminescent devices utilizing ZnS nanocrystals doped with Tb compounds

被引:15
作者
Toyama, T [1 ]
Yoshimura, K [1 ]
Fujii, A [1 ]
Haze, H [1 ]
Okamoto, H [1 ]
机构
[1] Osaka Univ, Grad Sch Engn Sci, Dept Syst Innovat, Toyonaka, Osaka 560, Japan
关键词
electroluminescence; nanocrystals; thin films; display devices; sputtering;
D O I
10.1016/j.apsusc.2004.10.112
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Green emission from ZnS nanocrystals (NCs) doped with Tb compounds has been investigated employing a double insulating thin-film electroluminescent device (TFELD) structure which has been used for conventional ac-driven TFELDs. The EL emission mechanism is discussed, centered on the generation of electric-field-induced high-energy electrons in NCs. The influence of Tb concentrations and co-doping of Tb compounds on the device performance is presented. Finally, green EL emission with a maximum luminance of 30 cd/m(2) at 90 V0-p employing ZnS:Tb,O,F NCs as the active layer is demonstrated. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:524 / 527
页数:4
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