Structural and luminescence properties of nanostructured ZnS:Mn

被引：45

作者：

Adachi, D ^{[1
]}

Hasui, S ^{[1
]}

Toyama, T ^{[1
]}

Okamoto, H ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn Sci, Dept Phys Sci, Osaka 5608531, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 09期

关键词：

D O I：

10.1063/1.1290274

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied structural and luminescence properties of nanostructured (NS-) ZnS:Mn which has potential applications in thin-film electroluminescence (TFEL) devices. As a NS-ZnS:Mn system, a ZnS:Mn/Si3N4 multilayer having thicknesses of 2.5 nm for ZnS and 0.6 nm for Si3N4 was prepared by a conventional rf-magnetron sputtering method. Grazing incidence x-ray reflectometry and x-ray diffractometry show that ZnS:Mn nanocrystals were formed between the amorphous Si3N4 layers. Photoluminescence intensity associated with the Mn2+ transitions per total thickness of the ZnS:Mn layers is increased in NS-ZnS:Mn in comparison with that of the ZnS:Mn thin film, indicating the effects due to quantum confinement. The TFEL device with NS-ZnS:Mn as an emission layer exhibits a reddish-orange broad band emission with the maximum luminance of 2.8 cd/m(2) under the 1-kHz sinusoidal wave operation at a voltage of 20.5 V0-p. (C) 2000 American Institute of Physics. [S0003-6951(00)05035-X].

引用

页码：1301 / 1303

页数：3

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