New efficient mechanism of excitation of electroluminescence from erbium ions in crystalline silicon

被引：3

作者：

Bresler, MS ^{[1
]}

Gusev, OB ^{[1
]}

Pak, PE ^{[1
]}

Sobolev, NA ^{[1
]}

Yassievich, IN ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

基金：

俄罗斯基础研究基金会;

关键词：

erbium electroluminescence; silicon p-n structure; Auger excitation;

D O I：

10.1016/S0022-2313(98)00132-X

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In p-n junctions based on c-Si : Er we have realized highly efficient excitation of erbium electroluminescence at 1.54 mu m with an efficiency close to unity. A possible mechanism is Anger recombination of electrons occupying the upper subband of the conduction band with free holes in the valence band whereas the energy of the recombination process is transferred by Coulomb interaction to 4f-electrons of an erbium ion transmitting it to the second excited state I-4(11/2) (excitation energy 1.26 eV). The observed three-level excitation of erbium ions is promising for development of a Si:Er laser. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：375 / 379

页数：5

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