Raman scattering studies of CuInS2 films grown by RF ion plating

被引：24

作者：

Kondo, K

Nakamura, S

Sato, K

机构：

[1] Stanley Elect Co ltd, Tsukuba Res Lab, Tsukuba, Ibaraki 3002635, Japan

[2] Tokyo Univ Agr & Technol, Fac Technol, Koganei, Tokyo 1848588, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 10期

关键词：

CuInS2; Raman spectroscopy; characterization; mean atomic weight of cations; rf ion plating; crystallinity;

D O I：

10.1143/JJAP.37.5728

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CuInS2 films were grown by rf ion plating and their crystallinity was characterized by Raman spectroscopy. Six Raman peaks were observed, most of which were assigned to the phonon modes of CuInSr2, except for a peak at 307 cm(-1) that was clearly observed in the films with a poor crystalline quality The peak at 307 cm(-1) was assigned to the totally symmetric mode by polarized Raman measurement. This peak was related to some kind of a localized mode with a smaller mean atomic weight of cations.

引用

页码：5728 / 5729

页数：2

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