Reentrant insulator-metal-insulator transition at B=0 in a two-dimensional hole gas

被引：74

作者：

Hamilton, AR ^{[1
]}

Simmons, MY ^{[1
]}

Pepper, M ^{[1
]}

Linfield, EH ^{[1
]}

Rose, PD ^{[1
]}

Ritchie, DA ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW LETTERS | 1999年 / 82卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.82.1542

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the observation of a reentrant insulator-metal-insulator transition at B = 0 in a two-dimensional (2D) hole gas in GaAs at temperatures down to 30 mK. At the lowest carrier densities the holes are strongly localized. As the carrier density is increased a metallic phase forms, with a clear transition at sigma similar or equal to 5e(2)/h. Further increasing the density weakens the metallic behavior and eventually leads to the formation of a second insulating state for sigma greater than or similar to 50e(2)/h. In the limit of high carrier densities, where k(F)l is large and r(s) is small, we thus recover the results of previous work on weakly interacting systems showing the absence of a 2D metallic state.[S031 -9007(99)08472-0].

引用

页码：1542 / 1545

页数：4

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