Deep-level emissions influenced by O and Zn implantations in ZnO

被引：279

作者：

Zhao, QX ^{[1
]}

Klason, P

Willander, M

Zhong, HM

Lu, W

Yang, JH

机构：

[1] Univ Gothenburg, Dept Phys, SE-41296 Gothenburg, Sweden

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Jilin Normal Univ, Inst Condensed State Phys, Jilin 136000, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 21期

关键词：

D O I：

10.1063/1.2135880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A set of bulk ZnO samples implanted with O and Zn at various densities were investigated by photoluminescence. The implantation concentration of O and Zn is varied between 1x10(17)/cm(3) and 5x10(19)/cm(3). The samples were thermally treated in an oxygen gas environment after the implantation. The results clearly show the influence of O and Zn implantations on the deep-level emission. By comparing the photoluminescence spectra for the samples with different implantations, we can conclude that the V-Zn is responsible to the observed deep-level emission. In addition, a novel transition at the emission energy of 3.08 eV at 77 K appears in the O-implanted sample with 5x10(19)/cm(3) implantation concentration. The novel emission is tentatively identified as O-antisite O-Zn. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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