Study of chirped quantum dot superluminescent diodes

被引：10

作者：

Han, IK ^{[1
]}

Bae, HC

Cho, WJ

Lee, JI

Park, HL

Kim, TG

Lee, JI

机构：

[1] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea

[2] Yonsei Univ, Dept Phys, Seoul 120740, South Korea

[3] Korea Univ, Dept Elect Engn, Seoul 136701, South Korea

[4] Korea Res Inst Stand & Sci, Nanosurface Grp, Taejon 305340, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 7B期

关键词：

superluminescent diodes; chirped quantum dot; electroluminescence;

D O I：

10.1143/JJAP.44.5692

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superluminescent diodes (SLDs) utilizing an InAs chirped quantum dot (QD) active layer were fabricated. The chirped QD active layer was designed as a three-stack InAs QD part with a band-gap energy of 0.95 eV and another three-stack InAs QD part with a band-gap energy of 1.03 eV. From the electroluminescence (EL) measurement of SLDs, it was observed that there were two peaks separated by 80 run. Such separation of the two peaks was consistent with that shown in the photoluminescence curve obtained at room temperature, indicating that the chirped QD characteristics of the active layer are directly reflected on the EL spectra of SLDs. The 3 dB bandwidths of both peaks were measured a 30 nm and 37 nm.

引用

页码：5692 / 5695

页数：4

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